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Samsung not too long ago introduced the beginning of next-generation DDR5 reminiscence manufacturing this week, all of which will probably be made on the corporate’s 14nm EUV course of node. The primary DDR5 arrivals will probably be aimed toward HPC & AI servers, providing up double the efficiency of previous-gen DDR4 reminiscence.
Based on an official Samsung weblog put up, the brand new course of node will assist Samsung’s 14nm DDR5 reminiscence obtain the best ranges of efficiency so far. Total speeds will far exceed that of DDR4, with entry-level kits working at near 4800MHz. At current, the 14nm EUV course of will for speeds north of seven.2 Gbps – greater than twice that of right this moment’s DDR4 (3.2 Gbps).
Samsung state that will probably be increasing its 14nm DDR5 reminiscence portfolio to knowledge facilities, supercomputers, and enterprise server functions, permitting for even denser choices primarily based on 24Gb DRAM ICs. This is able to successfully enable the corporate to upscale their DDR5 reminiscence from 512GB – 1TB capacities to 768GB and 1.5TB respectively.
Samsung declare business’s smallest 14nm DRAM primarily based on EUV know-how
The announcement marks the manufacturing of the business’s smallest 14nm (nanometer) DRAM primarily based on excessive ultraviolet (EUV) know-how. After the discharge of the corporate’s first EUV DRAM again in March of final 12 months, Samsung has elevated the variety of EUV layers to 5 to assist supply probably the most superior DRAM course of for its DDR5 modules.
Samsung’s official put up lays declare to information reminiscent of; “Samsung’s new five-layer EUV course of permits the business’s highest DRAM bit density, enhancing productiveness by roughly 20%” and “Primarily based on the newest DDR5 customary, Samsung’s 14nm DRAM will probably be supreme for dealing with ever-growing AI and 5G workloads”.
The put up continues with the next;
“We now have led the DRAM marketplace for practically three many years by pioneering key patterning know-how improvements,” mentioned Jooyoung Lee, Senior Vice President and Head of DRAM Product & Know-how at Samsung Electronics. “Immediately, Samsung is setting one other know-how milestone with multi-layer EUV that has enabled excessive miniaturization at 14nm — a feat not attainable with the traditional argon fluoride (ArF) course of. Constructing on this development, we are going to proceed to offer probably the most differentiated reminiscence options by totally addressing the necessity for better efficiency and capability within the data-driven world of 5G, AI, and the metaverse.“
Whereas it could nonetheless be a while earlier than we see DDR5 reminiscence modules on our cabinets, that is one positive step in the appropriate path. With DRAM now persevering with to scale all the way down to 10nm, EUV know-how additionally turns into more and more vital with the intention to enhance patterning accuracy. Samsung’s new EUV layering for its 14nm DRAM has helped the corporate obtain the best bit density available on the market – all whereas enhancing the general wafer productiveness by round 20%.
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